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K4S281632F-TC60

128Mb F-die SDRAM Specification

K4S281632F-TC60 Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)

* All inputs are sampled a

K4S281632F-TC60 General Description

The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows preci.

K4S281632F-TC60 Datasheet (144.28 KB)

Preview of K4S281632F-TC60 PDF

Datasheet Details

Part number:

K4S281632F-TC60

Manufacturer:

Samsung semiconductor

File Size:

144.28 KB

Description:

128mb f-die sdram specification.
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May. 2003
* Samsung Electronics reserves the right to .

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K4S281632F-TC60 128Mb F-die SDRAM Specification Samsung semiconductor

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