K4S281632F-TL75 - 128Mb F-die SDRAM Specification
The K4S280432E / K4S280832E / K4S281632E is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.
Synchronous design allows preci
SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 128Mb E-die SDRAM Specification Revision 1.2 May.
2003 Samsung Electronics reserves the right to change products or specification without notice.
Rev.
1.2 May.
2003 SDRAM 128Mb E-die (x4, x8, x16) Revision History Revision 1.0 (Nov.
2002) - First release.
CMOS SDRAM Revision 1.1 (Apr.
2003) - x4/x8/x16 Merged spec.
Revision 1.2 (May.
2003) - Delete -TC(L)7C Rev.
1.2 May.
2003 SDRAM 128Mb E-die (x4, x8, x16) CMOS SDRAM 8M x 4Bit x 4 Ba
K4S281632F-TL75 Features
* JEDEC standard 3.3V power supply
* LVTTL compatible with multiplexed address
* Four banks operation
* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave)
* All inputs are sampled a
