K4S281632F-Txx Datasheet - Samsung semiconductor

K4S281632F-Txx 128Mb F-die SDRAM

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows preci.

SDRAM 128Mb F-die (x4, x8, x16) CMOS SDRAM 128Mb F-die SDRAM Specification m o .c U 4 t e e h S a t a .D w Revision 1.1 w February 2004 w Samsung Electronics reserves the right to change products or specification without notice. m o .c U 4 t e e h S a at February 2004 Rev. 1.1 .D w w w SDRAM 128Mb F-die (x4, x8, x16) Revision History Revision 0.0 (Agust, 2003) - First release. Revision 0.1 (November, 2003) - completed DC characteristics. Revision 0.2 (November, 2003) - Preliminary sp.

K4S281632F-Txx Features

* JEDEC standard 3.3V power supply

* LVTTL compatible with multiplexed address

* Four banks operation

* MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)

* All inputs are

K4S281632F-Txx_Samsungsemiconductor.pdf