K4S281632F-Txx - 128Mb F-die SDRAM

Samsung semiconductor

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Datasheet Details

Part number	K4S281632F-Txx
Manufacturer	Samsung semiconductor
File Size	169.29 KB
Description	128Mb F-die SDRAM
Datasheet	K4S281632F-Txx_Samsungsemiconductor.pdf

K4S281632F-Txx Product details

Description

The K4S280432F / K4S280832F / K4S281632F is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 4 bits / 4 x 4,194,304 words by 8 bits / 4 x 2,097,152 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM (x4,x8) & L(U)DQM (x16) for masking.
Auto & self refresh.
64ms.

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Published: Mar 13, 2006 |