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K4S64323LH-FN Datasheet 512k X 32bit X 4 Banks Mobile Sdram

Manufacturer: Samsung Semiconductor

Overview: K4S64323LH - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The K4S64323LH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Key Features

  • 2.5V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Parti.

Similar Datasheet

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More Datasheets from Samsung Semiconductor

Part Number Description
K4S64323LH-FN60 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FC 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FE 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FF 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FG 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FHx 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LH-FL 512K x 32Bit x 4 Banks Mobile SDRAM
K4S64323LF-xx 2Mx32 Mobile SDRAM 90FBGA
K4S643232C 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643232E 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)

K4S64323LH-FN Distributor