- Part: K4S64323LH-FN
- Description: 512K x 32Bit x 4 Banks Mobile SDRAM
- Manufacturer: Samsung Semiconductor
- Size: 181.37 KB
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K4S64323LH-FN Key Features
- 2.5V power supply
- LVCMOS patible with multiplexed address
- Four banks operation
- MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type
- EMRS cycle with address key programs
- All inputs are sampled at the positive going edge of the system clock
- Burst read single-bit write operation
- Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR (Temperature pensated Self Refresh)
- DQM for masking
- Auto refresh
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