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K6F4008R2C - 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Datasheet Summary

Features

  • Process Technology: Full CMOS.
  • Organization: 512K x8 bit.
  • Power Supply Voltage: 1.65~2.2V.
  • Low Data Retention Voltage: 1.0V(Min).
  • Three state output status and TTL Compatible.
  • Package Type: 48-FBGA-6.5.

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Datasheet Details

Part number K6F4008R2C
Manufacturer Samsung semiconductor
File Size 149.97 KB
Description 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F4008R2C Datasheet
Additional preview pages of the K6F4008R2C datasheet.

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K6F4008R2C Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Errata correction - Change for tWP: 55 to 50ns for 70ns product - Change for tWHZ: 25 to 20ns for 70ns product Draft Date July 28, 1999 May 4, 2000 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 1.
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