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K6F4008U2E Datasheet

Manufacturer: Samsung Semiconductor
K6F4008U2E datasheet preview

Datasheet Details

Part number K6F4008U2E
Datasheet K6F4008U2E-Samsungsemiconductor.pdf
File Size 106.86 KB
Manufacturer Samsung Semiconductor
Description 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
K6F4008U2E page 2 K6F4008U2E page 3

K6F4008U2E Overview

The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology.

K6F4008U2E Key Features

  • Process Technology: Full CMOS
  • Organization: 512K x8 bit
  • Power Supply Voltage: 2.7~3.3V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three State Outputs
  • Package Type: 48(36)-TBGA-6.00x7.00
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K6F4016U4G-F 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
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