K6F4008U2E Key Features
- Process Technology: Full CMOS
- Organization: 512K x8 bit
- Power Supply Voltage: 2.7~3.3V
- Low Data Retention Voltage: 1.5V(Min)
- Three State Outputs
- Package Type: 48(36)-TBGA-6.00x7.00
- Part: K6F4008U2E
- Manufacturer: Samsung Semiconductor
- Size: 106.86 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F4008U2G | 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4008R2C | 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4E | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4E-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4G-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4008U2E Description
The K6F4008U2E families are fabricated by SAMSUNG′s advanced full CMOS process technology.