K6F4008R2C Key Features
- Process Technology: Full CMOS
- Organization: 512K x8 bit
- Power Supply Voltage: 1.65~2.2V
- Low Data Retention Voltage: 1.0V(Min)
- Three state output status and TTL patible
- Package Type: 48-FBGA-6.5
- Part: K6F4008R2C
- Manufacturer: Samsung Semiconductor
- Size: 149.97 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F4008U2E | 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4008U2G | 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4E | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4E-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F4016R4G-F | 256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F4008R2C Description
K6F4008R2C Family CMOS SRAM Document Title 512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 1.0 Finalized - Errata correction - Change for tWP: 55 to 50ns for 70ns product - Change for tWHZ:.