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K6R1008C1C-C12 Datasheet - Samsung semiconductor

128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.

K6R1008C1C-C12 Features

* Fast Access Time 10,12,15ns(Max.)

* Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating K6R1008C1C-10 : 80mA(Max.) K6R1008C1C-12 : 75mA(Max.) K6R1008C1C-15 : 73mA(Max.)

* Single 5.0V±10% Power Supply

* TTL Compatible

K6R1008C1C-C12 General Description

The K6R1008C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The K6R1008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advan.

K6R1008C1C-C12 Datasheet (131.65 KB)

Preview of K6R1008C1C-C12 PDF

Datasheet Details

Part number:

K6R1008C1C-C12

Manufacturer:

Samsung semiconductor

File Size:

131.65 KB

Description:

128kx8 bit high-speed cmos static ram(5v operating). operated at commercial and industrial temperature ranges..
PRELIMINARY K6R1008C1C-C/C-L, K6R1008C1C-I/C-P Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industri.

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TAGS

K6R1008C1C-C12 128Kx8 Bit High-Speed CMOS Static RAM5V Operating. Operated Commercial and Industrial Temperature Ranges. Samsung semiconductor

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