K6R1008C1C-I12 - 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges.
The K6R1008C1C is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits.
The K6R1008C1C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle.
The device is fabricated using SAMSUNG′s advan
PRELIMINARY K6R1008C1C-C/C-L, K6R1008C1C-I/C-P Document Title 128Kx8 Bit High-Speed CMOS Static RAM(5V Operating).
Operated at Commercial and Industrial Temperature Ranges.
CMOS SRAM Revision History Rev.
No.
Rev.
0.0 Rev.
1.0 History Initial release with Preliminary.
Release to Final Data Sheet.
1.1.
Delete Preliminary.
2.2.
Added Data Retention Characteristics.
Add 10ns part.
Delete 20ns speed bin Draft Data Aug.
5.
1998 Mar.
3.
1999 Remark Preliminary Final Rev.
2.0 Rev.
3.0 Mar.
3.
2000
K6R1008C1C-I12 Features
* Fast Access Time 10,12,15ns(Max.)
* Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 5mA(Max.) 0.5mA(Max.) L-ver. only Operating K6R1008C1C-10 : 80mA(Max.) K6R1008C1C-12 : 75mA(Max.) K6R1008C1C-15 : 73mA(Max.)
* Single 5.0V±10% Power Supply
* TTL Compatible
