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K7J161882B Datasheet (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

Manufacturer: Samsung Semiconductor

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Overview

K7J163682B K7J161882B www.DataSheet4U.com Document Title 512Kx36 & 1Mx18 DDR II SIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History Rev.

No.

0.0 0.1 0.2 0.3 History 1.

Key Features

  • 1.8V+0.1V/-0.1V Power Supply.
  • DLL circuitry for wide output data valid window and future freguency scaling.
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.
  • Separate independent read and write data ports.
  • HSTL I/O.
  • Synchronous pipeline read with self timed late write.
  • Registered address, control and data input/output.
  • Full data coherency, providing most current data.
  • DDR(Double.

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