K7J163682B - (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K7J163682B
Manufacturer	Samsung semiconductor
File Size	418.32 KB
Description	(K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
Datasheet	K7J163682B Datasheet
Note	This datasheet PDF includes multiple part numbers: K7J163682B, K7J161882B. Please refer to the document for exact specifications by model.
Additional preview pages of the K7J163682B datasheet.

Product details

Description

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Address Inputs Data Inputs 1 NOTE Q0-35 Data Outputs Read, Write Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No

Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future freguency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.
Separate independent read and write data ports.
HSTL I/O.
Synchronous pipeline read with self timed late write.
Registered address, control and data input/output.
Full data coherency, providing most current data.
DDR(Double.

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Published: Feb 23, 2009 |