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K7J161882B Datasheet

Manufacturer: Samsung Semiconductor
K7J161882B datasheet preview

Datasheet Details

Part number K7J161882B
Datasheet K7J161882B_Samsungsemiconductor.pdf
File Size 418.32 KB
Manufacturer Samsung Semiconductor
Description (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
K7J161882B page 2 K7J161882B page 3

K7J161882B Overview

Document Title 512Kx36 & 1Mx18 DDR II SIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDR II SIO b2 SRAM Revision History Rev. 0.0 0.1 0.2 0.3 History 1. Change the JTAG Block diagram.

K7J161882B Key Features

  • 1.8V+0.1V/-0.1V Power Supply
  • DLL circuitry for wide output data valid window and future freguency scaling
  • Separate independent read and write data ports
  • HSTL I/O
  • Synchronous pipeline read with self timed late write
  • Registered address, control and data input/output
  • Full data coherency, providing most current data
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 2-bit burst for both read and write operation
  • Clock-stop supports to reduce current
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