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K7J323682M Datasheet (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM

Manufacturer: Samsung Semiconductor

Download the K7J323682M datasheet PDF. This datasheet also includes the K7J321882M variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K7J321882M_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

on page 2 and add HSTL I/O comment 6.

Deleted R/W control pin description on page 2 1.

Update current characteristics in DC electrical characteristics 2.

Overview

K7J323682M K7J321882M www.DataSheet4U.com Document Title 1Mx36 & 2Mx18 DDR II SIO b2 SRAM 1Mx36-bit, 2Mx18-bit DDR II SIO b2 SRAM Revision History Rev.

No.

0.0 0.1 History 1.

Key Features

  • 1.8V+0.1V/-0.1V Power Supply.
  • DLL circuitry for wide output data valid window and future freguency scaling.
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/ -0.1V for 1.8V I/O.
  • Separate independent read and write data ports.
  • HSTL I/O.
  • Synchronous pipeline read with self timed late write.
  • Registered address, control and data input/output.
  • Full data coherency, providing most current data.
  • DDR(Double.

More Datasheets from Samsung Semiconductor

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K7J321882M (K7J321882M / K7J323682M) 1Mx36 & 2Mx18 DDR II SIO b2 SRAM
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K7J163682B (K7J161882B / K7J163682B) 512Kx36 & 1Mx18 DDR II SIO b2 SRAM
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