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K7M163625M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM

Product Overview

Samsung semiconductor

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K7M163625M (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM by Samsung semiconductor - Datasheet Preview — Datasheet preview – K7M163625M

Datasheet Details

Part number	K7M163625M
Manufacturer	Samsung semiconductor
File Size	297.18 KB
Description	(K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
Datasheet	K7M163625M Datasheet
Note	This datasheet PDF includes multiple part numbers: K7M163625M, K7M161825M. Please refer to the document for exact specifications by model.
Additional preview pages of the K7M163625M datasheet.

Product details

Description

The K7M163625M and K7M161825M are 18,874,368-bits Synchronous Static SRAMs.

Features

3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
Byte Writable Function.
Enable clock and suspend operation.
Single READ/WRITE control pin.
Self-Timed Write Cycle.
Three Chip Enable for simple depth expansion with no data contention.
A interleaved burst or a linear burst mode.
Asynchronous output enable control.
Power Down mod.

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K7M163635B - 512Kx36 & 1Mx18 Flow-Through NtRAM
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K7M161825A - 512K x 36/32 & 1M x 18 Flow-Through NtRAM
K7M161825M - (K7M161825M / K7M163625M) 512Kx36 & 1Mx18 Flow-Through NtRAM
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Published: Apr 30, 2006 |