K7S1618T4C 512Kx36 & 1Mx18 QDR II b4 SRAM

Samsung semiconductor

K7S1618T4C Description

K7S1636T4C K7S1618T4C 512Kx36 & 1Mx18 QDRTM II+ b4 SRAM 18Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN T.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK.

K7S1618T4C Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future freguency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Separate independent read and write data ports with concurrent read and write operation
* HSTL I/O

K7S1618T4C Applications

* where Product failure couldresult in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. ww

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Datasheet Details

Part number: K7S1618T4C
Manufacturer: Samsung semiconductor
File Size: 416.48 KB
Datasheet: K7S1618T4C_Samsungsemiconductor.pdf
Description: 512Kx36 & 1Mx18 QDR II b4 SRAM

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