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K7S3218T4C

1Mx36 & 2Mx18 QDRTM II b4 SRAM

K7S3218T4C Features

* 1.8V+0.1V/-0.1V Power Supply.

* DLL circuitry for wide output data valid window and future frequency scaling.

* I/O Supply Voltage 1.5V+0.1V/-0.1V

* Separate independent read and write data ports with concurrent read and write operation

* HSTL I/O

K7S3218T4C General Description

Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK TDO NC Notes: Data Outputs Write Control Pin,active when low Read Control Pin,active when low Block Write Control Pin,active when low Input Referenc.

K7S3218T4C Datasheet (478.71 KB)

Preview of K7S3218T4C PDF

Datasheet Details

Part number:

K7S3218T4C

Manufacturer:

Samsung semiconductor

File Size:

478.71 KB

Description:

1mx36 & 2mx18 qdrtm ii b4 sram.
K7S3236T4C K7S3218T4C 1Mx36 & 2Mx18 QDRTM II+ b4 SRAM 36Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THI.

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K7S3218T4C 1Mx36 2Mx18 QDRTM SRAM Samsung semiconductor

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