K7S3218T4C 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Samsung semiconductor

Description

K7S3236T4C K7S3218T4C 1Mx36 & 2Mx18 QDRTM II+ b4 SRAM 36Mb QDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THI.
Input Clock Q Valid output Output Echo Clock DLL Disable Address Inputs Data Inputs NOTE Q0-35 W R BW0, BW1,BW2, BW3 VREF ZQ VDD VDDQ VSS TMS TDI TCK.

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Datasheet Specifications

Part number: K7S3218T4C
Manufacturer: Samsung semiconductor
File Size: 478.71 KB
Datasheet: K7S3218T4C_Samsungsemiconductor.pdf
Description: 1Mx36 & 2Mx18 QDRTM II b4 SRAM

Features

* 1.8V+0.1V/-0.1V Power Supply.
* DLL circuitry for wide output data valid window and future frequency scaling.
* I/O Supply Voltage 1.5V+0.1V/-0.1V
* Separate independent read and write data ports with concurrent read and write operation
* HSTL I/O

Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice. w

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K7S3218T4C 1Mx36 2Mx18 QDRTM SRAM Samsung semiconductor

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