KBE00S009M-D411
KBE00S009M-D411 is 1Gb NAND x 2 + 256Mb Mobile SDRAM x 2 manufactured by Samsung Semiconductor.
features and specifications including FAQ, please refer to Samsung’s web site. http://samsungelectronics./semiconductors/products/products_index.html The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have any questions, please contact the SAMSUNG branch office near you.
Revision 1.0 May 2005
MCP MEMORY
Multi-Chip Package MEMORY 1G Bit (128Mx8) Nand Flash- 2 / 256M Bit (4Mx16x4Banks) Mobile SDRAM- 2 FEATURES
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- Operating Temperature : -25°C ~ 85°C
- Package : 137-ball FBGA Type
- 12x14mm, 0.8mm pitch <NAND>
- Power Supply Voltage : 2.5~2.9V
- Organization
- Memory Cell Array : (256M + 8,192K)bits x 8bits
- Data Register : (512 + 16)bits x 8bits
- Automatic Program and Erase
- Page Program : (512 + 16)bits x 8bits
- Block Erase : (16K + 512)Bytes
- Page Read Operation
- Page Size : (512 + 16)Bytes
- Random Access : 15µs(Max.)
- Serial Page Access : 50ns(Min.)
- Fast Write Cycle Time
- Program time : 200µs(Typ.)
- Block Erase Time : 2ms(Typ.)
- mand/Address/Data Multiplexed I/O Port
- Hardware Data Protection
- Program/Erase Lockout During Power Transitions
- Reliable CMOS Floating-Gate Technology
- Endurance : 100K Program/Erase Cycles
- Data Retention : 10 Years
- mand Register Operation
- Intelligent Copy-Back
- Unique ID for Copyright...
