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KFG2816Q1M-DEB - (KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory

Datasheet Summary

Description

5.

Added OTP erase case NOTE 6.

Revised case definitions of Interrupt Status Register 7.

Features

  • Design Technology: 0.12µm.
  • Voltage Supply - 1.8V device(KFG2816Q1M) : 1.7V~1.95V - 3.3V device(KFG2816U1M) : 2.7V~3.6V.
  • Organization - Host Interface:16bit.
  • Internal BufferRAM(3K Bytes) - 1KB for BootRAM, 2KB for DataRAM.
  • NAND Array - Page Size : (1K+32)bytes - Block Size : (64K+2K)bytes FLASH MEMORY.
  • Architecture www. DataSheet4U. com.
  • Performance.
  • Host Interface type - Synchronous Burst Read : Clock Frequency: up to 54M.

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Datasheet Details

Part number KFG2816Q1M-DEB
Manufacturer Samsung semiconductor
File Size 1.24 MB
Description (KFG2816Q1M-DEB / KFG2816U1M-DIB) Flash Memory
Datasheet download datasheet KFG2816Q1M-DEB Datasheet
Additional preview pages of the KFG2816Q1M-DEB datasheet.

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OneNAND128 FLASH MEMORY www.DataSheet4U.com OneNAND SPECIFICATION Product OneNAND128 Part No. KFG2816Q1M-DEB KFG2816U1M-DIB VCC(core & IO) 1.8V(1.7V~1.95V) 3.3V(2.7V~3.6V) Temperature Extended Industrial PKG 67FBGA(LF)/48TSOP1 67FBGA(LF)/48TSOP1 Version: Ver. 1.1 Date: Dec. 23, 2005 1 OneNAND128 FLASH MEMORY www.DataSheet4U.com INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND. 1.
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