S524AD0XD1 Datasheet | Samsung Semiconductor

S524AD0XD1/D0XF1 128K/256K-bit Serial EEPROM for Low Power Data Sheet OVERVIEW The S524AD0XD1/D0XF1 serial EEPROM has a 128K/256K-bit (16,384/32,768 bytes) capacity, supporting the standard I2C™-bus serial interface. It is fabricated using Samsung’s most advanced CMOS technology. It has been developed for low power and low voltage applications (1.8 V to 5.5 V). One of its major feature is a hardware-based write protection circuit for the entire memory area. Hardware-based write protection is controlled by the state of the write-protect (WP) pin. Using one-page write mode, you can load up to 64 bytes of data into the EEPROM in a single write operation. Another significant feature of the S524AD0XD1/D0XF1 is its support for fast mode and standard mode. Features I2C-Bus Interface - - Two-wire serial interface Automatic word address increment - Operating Characteristics - Operating voltage - 1.8 V to 5.5 V Operating current - Maximum write current: < 3 m A at 5.5 V - Maximum read current: < 400 µA at 5.5 V - Maximum stand-by current: < 1 µA at 5.5 V - Operating temperature range - - 25°C to + 70°C (mercial) - - 40°C to + 85°C (industrial) - Operating clock frequencies - 400 k Hz at standard mode - 1 MHz at fast mode - Electrostatic discharge (ESD) - 5,000 V (HBM) - 500 V (MM) Packages - 8-pin DIP, and TSSOP EEPROM - - - - - - - 128K/256K-bit (16,384/32,768 bytes) storage area 64-byte page buffer Typical 3 ms write cycle time with auto-erase function Hardware-based write protection for the entire EEPROM (using the WP pin) EEPROM programming voltage generated on chip 500,000 erase/write cycles 50 years data...