256K-bit Datasheet | Specifications & PDF Download

Features • Low Voltage Operation - 2.7V Read - 5V Program/Erase Fast Read Access Time - 120 ns • Internal Erase/Program Control •• Sector Architecture

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M29F200BT M29F200BB 2 Mbit (256Kb x8 or 128Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM

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Ordering number : ENA1190B CMOS IC LE25FW203A Overview 2M-bit (256K×8) Serial Flash Memory 30MHz SPI Bus The LE25FW203A is an onboard programmable

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MX28F2000T 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 90/120 ns • Low power consumption –

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00023-0v01-E 2 M (256 K × 8) Bit SPI MB85RS2MT ■ DESCRIPTION MB85RS2MT is a FRAM (Ferroelectric

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FUJITSU SEMICONDUCTOR DATA SHEET Memory FRAM DS501-00021-2v0-E 256 K (32 K × 8) Bit SPI MB85RS256B ■ DESCRIPTION MB85RS256B is a FRAM (Ferroelectri

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PDM41256 256K Static RAM 32K x 8-Bit Features s High-speed access times Com’l: 7, 8, 10, 12, and 15 ns Ind’l: 8, 10, 12, and 15 ns s Low power operati

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PRELIMINARY MX28F2100B 2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY FEATURES • 262,144x8/131,072x16 switchable • Fast access time: 70/90/120ns • Low

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M27C4002 4 Mbit (256Kb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ OPERATION FAST ACCESS TIME: 45ns LOW POWER CONSUMPTION: – Active Cu

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MX28F2000P 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144 bytes by 8-bit organization • Fast access time: 70/90/120 ns • Low power consumption

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E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read  80/120 ns Max Access Time 40 ns Max. Output Enable Time n

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MX26LV400 Macronix NBit TM Memory Family 4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY FEATURES • Ext

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20866-2E FLASH MEMORY CMOS 4M (512K × 8/256K × 16) BIT MBM29DL400TC-55/-70/-90/-12/MBM29DL400BC-55/-70/-90/-1

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MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • 262,144x 8 only • Fast access time: 55/70/90/120ns • Low power consumption - 30mA maximu

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MX27C256 FEATURES 256K-BIT [32K x 8] CMOS EPROM • Operating current: 30mA • Standby current: 100uA • Package type: - 28 pin plastic DIP - 32 pin PLCC

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® LY612568 Preliminary 0.2 5V 256K X 8 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 0.1 Rev. 0.2 Description Preliminary Revised Test Co

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IS41C16257A IS41LV16257A 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE FEATURES • • • • • • Fast access and cycle time TTL compatible inputs and

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Features • Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Program Control and Timer •

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