.
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400 4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO.
AMIC Technology
A290021 - 256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
A29002/A290021 Series 256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Features n 5.0V ± 10% for read and write operations n Access times: - .
Siemens Semiconductor Group
HYB314265BJ-50 - 256K x 16-Bit EDO-Dynamic RAM
256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 144 words by 16-bit organizati.
STMicroelectronics
M27V201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27V201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s LOW VOLTAGE READ OPERATION: 3V to 3.6V FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION:.
STMicroelectronics
M27W201 - 2 Mbit 256Kb x 8 Low Voltage UV EPROM and OTP EPROM
M27W201 2 Mbit (256Kb x 8) Low Voltage UV EPROM and OTP EPROM s 2.7V to 3.6V LOW VOLTAGE in READ OPERATION ACCESS TIME: – 70ns at VCC = 3.0V to 3.6V .
Macronix International
IMX29F002 - 2M-BIT [256K x 8] CMOS FLASH MEMORY
MX29F002/002N 2M-BIT [256K x 8] CMOS FLASH MEMORY FEATURES • • • 262,144x 8 only Fast access time: 55/70/90/120ns Low power consumption - 30mA maximum.
Samsung semiconductor
K7B803625B - 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
K7B803625B K7B801825B 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0.
Samsung semiconductor
K6R4016V1C - 256Kx16 Bit High Speed Static RAM
www.DataSheet4U.com PRELIMPreliminaryPPPPPPPPPINARY CMOS SRAM K6R4016V1C-C/C-L, K6R4016V1C-I/C-P Document Title 256Kx16 Bit High Speed Static RAM(3..
Motorola
MCM63F919 - 256K x 36 and 512K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MCM63F837/D Product Preview 256K x 36 and 512K x 18 Bi.
ON Semiconductor
LE25S20MB - 2M-bit (256K x 8) Serial Flash Memory
LE25S20MB Advance Information CMOS LSI 2M-bit (256K x 8) Serial Flash Memory Overview The LE25S20MB is a SPI bus flash memory device with a 2M bit (2.
Mitsubishi
M5M4257L-12 - 256K-Bit DRAM
MITSUBISHI LSls M5M4257L.12, ·15, ·20 262 144-BIT (262 144-WORD BY I-BIT) DYNAMIC RAM DESCRIPTION This is a family of 262 144-word by 1-bit dynamic R.
AMIC Technology
LP62S2048U-70LLI - 256K X 8 BIT LOW VOLTAGE CMOS SRAM
LP62S2048-I Series 256K X 8 BIT LOW VOLTAGE CMOS SRAM Features n Power supply range: 2.7V to 3.3V n Access times: 70/100 ns (max.) n Current: Low powe.
CatalystSemiconductor
25C128 - 128K/256K-Bit SPI Serial CMOS E2PROM
CAT25C128/256 128K/256K-Bit SPI Serial CMOS E2PROM FEATURES s 5 MHz SPI Compatible s 1.8 to 6.0 Volt Operation s Hardware and Software Protection s Ze.
Catalyst Semiconductor
CAT28C257 - 256K-Bit CMOS PARALLEL E2PROM
Advanced CAT28C257 256K-Bit CMOS PARALLEL E2PROM FEATURES s Fast Read Access Times: 90/120/150 ns s Low Power CMOS Dissipation: s Automatic Page Writ.
Intel
P28F002BC - 2-MBIT (256K x 8) BOOT BLOCK FLASH MEMORY
E PRELIMINARY 28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY n High Performance Read 80/120 ns Max Access Time 40 ns Max. Output Enable Time n.
Brilliance Semiconductor
BS62LV2001 - Very Low Power/Voltage CMOS SRAM 256K X 8 bit
BSI FEATURES Very Low Power/Voltage CMOS SRAM 256K X 8 bit DESCRIPTION BS62LV2001 • Wide Vcc operation voltage : 2.4V ~ 5.5V • Very low power c.
Brilliance Semiconductor
BS616LV4010 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BSI FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit DESCRIPTION BS616LV4010 • Very low operation voltage : 2.7 ~ 3.6V • Very low power .
Brilliance Semiconductor
BS616LV4011 - Very Low Power/Voltage CMOS SRAM 256K X 16 bit
BSI FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit DESCRIPTION BS616LV4011 • Very low operation voltage : 2.4 ~ 5.5V • Very low power .
