K6F2008T2E 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

Description

K6F2008T2E Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision.
The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.

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Datasheet Specifications

Part number: K6F2008T2E
Manufacturer: Samsung semiconductor
File Size: 128.30 KB
Datasheet: K6F2008T2E_Samsungsemiconductor.pdf
Description: 256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM

Features

* Process Technology: Full CMOS
* Organization: 256Kx8
* Power Supply Voltage: 2.7 ~ 3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Outputs

K6F2008T2E Distributors

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K6F2008T2E 256K bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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