K6F2008T2E Datasheet, Ram, Samsung semiconductor

K6F2008T2E Features

• Ram
• Process Technology: Full CMOS
• Organization: 256Kx8
• Power Supply Voltage: 2.7 ~ 3.6V
• Low Data Retention Voltage: 1.5V(Min)
• Three State O

PDF File Details

Part number:

K6F2008T2E

Manufacturer:

Samsung semiconductor

File Size:

128.30kb

Download:

📄 Datasheet

Description:

256k x8 bit super low power and low voltage full cmos static ram. The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperatur

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