The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology.
The families support industrial temperature ranges for user flexibility of system design.
The families also supports low data retention voltage for battery back-up operation with low data retention current.
P
K6F2008T2E Family Document Title Preliminary CMOS SRAM www.DataSheet4U.com 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No.
History 0.0 Initial draft Draft Date June 16 , 2003 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics.
SAMSUNG Electronics CO., LTD.
reserve the right to change the specifications and products.
SAMSUNG Electronics will answer to your questions about device.
If you have any questions, please cont
K6F2008T2E_Samsungsemiconductor.pdf
Datasheet Details
K6F2008T2E
Samsung semiconductor
128.30 KB
256k x8 bit super low power and low voltage full cmos static ram.
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PanJit Group
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