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K6F2008U2E-YF55

256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

K6F2008U2E-YF55 Datasheet (130.94 KB)

Preview of K6F2008U2E-YF55 PDF

Datasheet Details

Part number:

K6F2008U2E-YF55

Manufacturer:

Samsung semiconductor

File Size:

130.94 KB

Description:

256kx8 bit super low power and low voltage full cmos static ram.
K6F2008U2E Family Document Title 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0.

K6F2008U2E-YF55 Features

* Process Technology: Full CMOS

* Organization: 256Kx8

* Power Supply Voltage: 2.7~3.3V

* Low Data Retention Voltage: 1.5V(Min)

* Three State Outputs

* Package Type: 32-TSOP1-0813.4F CMOS SRAM GENERAL DESCRIPTION The K6F2008U2E families are fabricate

K6F2008U2E-YF55 General Description

The K6F2008U2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also supports low data retention voltage for battery back-up operati.

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TAGS

K6F2008U2E-YF55 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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