K6F2008V2E Datasheet, Ram, Samsung semiconductor

K6F2008V2E Features

  • Ram
  • Process Technology: Full CMOS
  • Organization: 256Kx8
  • Power Supply Voltage: 3.0 ~ 3.6V
  • Low Data Retention Voltage: 1.5V(Min)
  • Three State O

PDF File Details

Part number:

K6F2008V2E

Manufacturer:

Samsung semiconductor

File Size:

134.49kb

Download:

📄 Datasheet

Description:

256kx8 bit super low power and low voltage full cmos static ram. The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperatur

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TAGS

K6F2008V2E
256Kx8
bit
Super
Low
Power
and
Low
Voltage
Full
CMOS
Static
RAM
Samsung semiconductor

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Stock and price

Samsung Semiconductor
SRAM - Async Single - 3.3V - 2Mbit (256K x 8) - 70ns - 32-Pin TSOP-I - Tray
Onlinecomponents.com
K6F2008V2E-LF70000
17860 In Stock
Qty : 500 units
Unit Price : $1.56
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