K6F2008V2E Datasheet - Samsung semiconductor

K6F2008V2E 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM

The K6F2008V2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. P.

K6F2008V2E Family Document Title CMOS SRAM 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 1.0 1.1 Initial draft Finalize Draft Date July 19 , 2001 September 27, 2001 Remark Preliminary Final Final Revised May 13, 2003 - Added Lead Free(LF) product for 32-TSOP1-0813.4F(LF) package. The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. .

K6F2008V2E Datasheet (134.49 KB)

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Datasheet Details

Part number:

K6F2008V2E

Manufacturer:

Samsung semiconductor

File Size:

134.49 KB

Description:

256kx8 bit super low power and low voltage full cmos static ram.

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K6F2008V2E 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor

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