K6F2008U2E-YF70 Datasheet, Ram, Samsung semiconductor

✔ K6F2008U2E-YF70 Features

Process Technology: Full CMOS
Organization: 256Kx8
Power Supply Voltage: 2.7~3.3V
Low Data Retention Voltage: 1.5V(Min)
Three State Outputs
Package Type: 32-T

PDF File Details

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Part number:

K6F2008U2E-YF70

Manufacturer:

Samsung semiconductor

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130.94 KB

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📄 Datasheet

Description:

256kx8 bit super low power and low voltage full cmos static ram. The K6F2008U2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support various operating tem

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Samsung Electronics Co. Ltd

K6F2008U2EYF70

Electronic Component

ComSIT USA

906 In Stock

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K6F2008U2E-YF70 256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM Samsung semiconductor