SW30N06 mosfet equivalent, n-channel mosfet.
* High ruggedness
* RDS(ON) (Max 0.036 Ω)@VGS=10V
* Gate Charge (Typ 20nC)
* Improved dv/dt Capability
* 100% Avalanche Tested
TO-220
TO-251
TO-252.
These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on .
Image gallery
TAGS
Download (Size : 551.06KB)