SW30N06 Key Features
- High ruggedness
- RDS(ON) (Max 0.036 Ω)@VGS=10V
- Gate Charge (Typ 20nC)
- Improved dv/dt Capability
- 100% Avalanche Tested
- Part: SW30N06
- Manufacturer: Samwin
- Size: 551.06 KB
Related Samwin Datasheets
| Part Number | Description |
|---|---|
| SW3205 | N-channel MOSFET |
| SW3205B | N-channel Enhanced mode TO-220 MOSFET |
| SW3710 | N-channel MOSFET |
| SW3N80 | N-channel MOSFET |
| SW3N80A | N-channel MOSFET |
SW30N06 Description
These N-channel enhancement mode power field effect transistors are produced using SAMWIN’s proprietary, planar stripe, DMOS technology. This advanced technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Thermal characteristics Symbol Rthjc Rthcs Rthja May.