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SW8N60D - N-channel MOSFET

Description

1.

Gate 2.

Drain 3.

Features

  • TO-262 TO-220F.
  • High ruggedness.
  • Low RDS(ON) (Typ 0.92Ω)@VGS=10V.
  • Low Gate Charge (Typ 29nC).
  • Improved dv/dt Capability.
  • 100% Avalanche Tested.

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Datasheet Details

Part number SW8N60D
Manufacturer Samwin
File Size 804.46 KB
Description N-channel MOSFET
Datasheet download datasheet SW8N60D Datasheet
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SW8N60D N-channel Enhanced mode TO-262/TO-220F MOSFET Features TO-262 TO-220F  High ruggedness  Low RDS(ON) (Typ 0.92Ω)@VGS=10V  Low Gate Charge (Typ 29nC)  Improved dv/dt Capability  100% Avalanche Tested  Application:LED,Charger,PC Power 1 2 3 1 23 General Description 1. Gate 2. Drain 3. Source This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. Order Codes BVDSS : 600V ID : 8A RDS(ON) : 0.
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