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1N5817W Datasheet, Sangdest Microelectronics

1N5817W diode equivalent, schottky barrier diode.

1N5817W Avg. rating / M : 1.0 rating-13

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1N5817W Datasheet

Features and benefits


* Metal silicon junction, majority carrier conduction
* Guarding for overvoltage protection
* Low power loss, high efficiency
* High current capability <.

Application

Mechanical Data:
* Case: SOD-123FL molded plastic body
* Terminals: Solder plated, solderable per MIL-STD-750, M.

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