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1N5817W

Manufacturer: Sangdest Microelectronics

1N5817W datasheet by Sangdest Microelectronics.

1N5817W datasheet preview

1N5817W Datasheet Details

Part number 1N5817W
Datasheet 1N5817W-SangdestMicroelectronics.pdf
File Size 125.40 KB
Manufacturer Sangdest Microelectronics
Description SCHOTTKY BARRIER DIODE
1N5817W page 2 1N5817W page 3

1N5817W Overview

Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE.

1N5817W Key Features

  • Metal silicon junction, majority carrier conduction
  • Guarding for overvoltage protection
  • Low power loss, high efficiency
  • High current capability
  • Low forward voltage drop
  • High surge capability
  • For use in low voltage, high frequency inverters

1N5817W from other manufacturers

View 1N5817W datasheet index

Brand Logo Part Number Description Other Manufacturers
CHINA BASE 1N5817W 1A Surface Mount Schottky Barrier Diode CHINA BASE
JGD Logo 1N5817W Surface Mount Schottky Barrier Rectifiers JGD
Kexin Logo 1N5817W Schottky Barrier Diodes Kexin
SEMTECH Logo 1N5817W Surface Mount Schottky Barrier Rectifier SEMTECH
Rectron Logo 1N5817W SCHOTTKY BARRIER RECTIFIER Rectron
Sangdest Microelectronics logo - Manufacturer

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1N5817W Distributor

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