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1N5817W, SCHOTTKY BARRIER DIODE - Sangdest Microelectronics

1N5817W-SangdestMicroelectronics.pdf

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Datasheet Details

Part number:

1N5817W

Manufacturer:

SangdeSTMicroelectronics ↗

File Size:

125.40 KB

Description:

Schottky barrier diode.

1N5817W Description

1N5817W Features

* Metal silicon junction, majority carrier conduction

* Guarding for overvoltage protection

* Low power loss, high efficiency

* High current capability

* Low forward voltage drop

* High surge capability

* For use in low voltage, high frequency

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📌 All Tags

1N5817W SCHOTTKY BARRIER DIODE Sangdest Microelectronics