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2SJ670 - P-Channel Silicon MOSFET

Features

  • P-Channel Silicon MOSFET General-Purpose Switching Device.

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Full PDF Text Transcription

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Ordering number : EN8354A 2SJ670 SANYO Semiconductors DATA SHEET 2SJ670 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --100 ±20 --1.5 --6 1.5 3.
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