* Low noise : NF=1.5dB typ (f=1GHz).
* High gain : | S2le |2=9dB typ (f=1GHz).
* High cutoff frequency : fT=5GHz typ. Package Dimensions unit:mm 2018B [2SA1963] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt
2SA1963
Sanyo Semicon Device
157.47 KB
Pnp epitaxial planar silicon transistor.
Ordering number:5230 PNP Epitaxial Planar Silicon Transistor 2SA1963 High-Frequecy Low-Noise Amplifier, Ultrahigh-Speed Switching Applications Featu.
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