* Adoption of FBET and MBIT processes.
* High current capacitance.
* Low collector-to-emitter saturation voltage.
* High-speed switching.
* Ultrasmall package facilitates miniaturization in end products.
* High allowable power dissipation. 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2
2SA2013
Sanyo Semicon Device
50.18 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN6307A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2013/2SC5566 DC/DC Converter Applications Applications Relay drivers,.
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