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Sanyo Electric Components Datasheet

2SC3068 Datasheet

High-hFE/ Low-Frequency General-Purpose Amp Applications

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Ordering number:EN943G
NPN Epitaxial Planar Silicon Transistor
2SC3068
High hFE, Low-Frequency
General-Purpose Amplifier Applications
Applications
· Low-frequency, general-purpose amplifier., various
drivers, muting circuit.
Features
· High DC current gain (hFE=800 to 3200).
· Large current capacity.
· Low collector-to-emitter saturation voltage
(VCE(sat)=0.5V max).
· High VEBO (VEBO15V).
Package Dimensions
unit:mm
2003A
[2SC3068]
JEDEC : TO-92
EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCB=20V, IE=0
VEB=10V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=200mA
VCE=10V, IC=10mA
VCB=10V, f=1MHz
B : Base
C : Collector
E : Emitter
SANYO : NP
Ratings
30
25
15
300
500
60
600
150
–55 to +150
Unit
V
V
V
mA
mA
mA
mW
˚C
˚C
Ratings
min typ
800 1500
600
250
4.5
max
0.1
0.1
3200
Unit
µA
µA
MHz
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1098HA (KT)/6140MO/4207KI/3085KI/2033KI, TS No.943–1/3
www.DataSheet.in


Sanyo Electric Components Datasheet

2SC3068 Datasheet

High-hFE/ Low-Frequency General-Purpose Amp Applications

No Preview Available !

Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
2SC3068
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=200mA, IB=4mA
IC=200mA, IB=4mA
IC=10µA, IE=0
IC=1mA, RBE=
IE=10µA, IC=0
Ratings
min typ
0.12
0.85
30
25
15
max
0.5
1.2
Unit
V
V
V
V
V
www.DataSheet.in
No.943–2/3


Part Number 2SC3068
Description High-hFE/ Low-Frequency General-Purpose Amp Applications
Maker Sanyo Semicon Device
Total Page 3 Pages
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