* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SC3069] JEDEC : TO-92 EIAJ : SC-43 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base
2SC3069
Sanyo Semicon Device
84.50 KB
Npn transistor.
Ordering number:EN934G NPN Epitaxial Planar Silicon Transistor 2SC3069 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications <.
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