* High DC current gain (hFE=800 to 3200).
* Large current capacity (IC=1.2A).
* Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max).
* High VEBO (VEBO≥15V). EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-t
2SC3070
Sanyo Semicon Device
120.30 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications <.
📁 Related Datasheet
2SC3071 NPN Epitaxial Planar Silicon Transistor (Sanyo Semicon Device)
2SC3072 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3072 Silicon NPN Transistor (Kexin)
2SC3073 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3074 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3074 TO-251 NPN Transistor (INCHANGE)
2SC3074 TO-252 NPN Transistor (INCHANGE)
2SC3074 Silicon NPN Transistor (Kexin)
2SC3075 Silicon NPN Transistor (Toshiba Semiconductor)
2SC3075 NPN Silicon Transistor (Kexin)
