* High DC current gain (hFE=500 to 2000).
* High breakdown voltage (VCEO≥100V).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). Package Dimensions unit:mm 2006B [2SC3071] EIAJ : SC-51 Specifications Absolute Maximum Ratings at Ta = 25˚C Par
2SC3071
Sanyo Semicon Device
82.69 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN946G NPN Epitaxial Planar Silicon Transistor 2SC3071 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications <.
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