2SC3820 transistor equivalent, npn transistor.
* Adoption of FBET and MBIT processes.
* High DC current gain (hFE=800 to 3200).
* Low collector-to-emitter saturation voltage
(VCE(sat)≤0.5V).
* High VEB.
Applications
* Drivers, muting circuits.
Features
* Adoption of FBET and MBIT processes.
* High DC current .
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