* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Large current capacity (IC=0.7A).
* Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
* High VEBO (VEBO≥15V). 0.45 0.5 0.6 2.0 0.45 0.44 14.0 5.0 1 2 3 Specifications Absolute Maximum Ratings
2SC4204
Sanyo Semicon Device
136.10 KB
Npn epitaxial planar silicon transistor.
Ordering number:EN2531A NPN Epitaxial Planar Silicon Transistor 2SC4204 High-hFE, AF Amplifier Applications Applications AF amplifier, various.
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