2SC4219 transistor equivalent, npn triple diffused planar silicon transistor.
* High breakdown voltage, high reliability (VCEO≥400V).
* Fast switching speed (tf=0.1µs typ).
* Wide ASO.
* Adoption of MBIT process.
* Suitable for .
Features
* High breakdown voltage, high reliability (VCEO≥400V).
* Fast switching speed (tf=0.1µs typ).
* W.
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