2SC4390 transistor equivalent, npn epitaxial planar silicon transistor.
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Large current capacity (IC=2A).
* Low collector-to-emitter saturation voltage (VCE.
Features
* Adoption of MBIT process.
* High DC current gain (hFE=800 to 3200).
* Large current capacity (IC.
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