2SD2658LS transistor equivalent, npn triple diffused planar silicon transistor.
* High speed.
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process.
* On-chip damper diode..
Features
* High speed.
* High breakdown voltage (VCBO=1500V).
* High reliability (Adoption of HVP process)..
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