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Sanyo Electric Components Datasheet

2SK4179 Datasheet

N-Channel Silicon MOSFET

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Ordering number : ENA1269
2SK4179
SANYO Semiconductors
DATA SHEET
2SK4179
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Motor drive.
Avalanche resistance guarantee.
10V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single pulse) *1
Avalanche Current *2
Note : *1 VDD=30V, L=50μH, IAV=48A
*2 L50μH, Single pulse
Marking : K4179
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
75
±20
80
320
1.75
70
150
--55 to +150
100
48
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
www.DataSheet4Uc.cuosmtomer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72308QA TI IM TC-00001515 No. A1269-1/5


Sanyo Electric Components Datasheet

2SK4179 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

Electrical Characteristics at Ta=25°C
2SK4179
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=75V, VGS=0V
VGS= ±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=40A
ID=40A, VGS=10V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=80A
VDS=30V, VGS=10V, ID=80A
VDS=30V, VGS=10V, ID=80A
IS=80A, VGS=0V
Package Dimensions
unit : mm (typ)
7507-002
10.2
5.1
3.6
4.5
1.3
min
75
Ratings
typ
2
21 35
10.5
5400
480
350
62
335
220
160
100
30
28
1.07
max
1
±10
4
13.7
1.5
Unit
V
μA
μA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
1.2
0.8
123
2.55 2.55
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10μs
D.C.1%
www.DataSheet4U.com G
VDD=30V
ID=40A
RL=0.75Ω
D VOUT
2SK4179
P.G 50Ω S
Avalanche Resistance Test Circuit
50Ω
L
10V
0V
50Ω
2SK4179
VDD
No. A1269-2/5


Part Number 2SK4179
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
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2SK4179 Datasheet PDF






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