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2SK4179 - N-Channel Silicon MOSFET

Features

  • General-Purpose Switching Device.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1269 2SK4179 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4179 Features • • • • General-Purpose Switching Device Applications Low ON-resistance. Motor drive. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings 75 ±20 80 320 1.75 70 150 --55 to +150 100 48 Unit V V A A W W °C °C mJ A Note : *1 VDD=30V, L=50μH, IAV=48A *2 L≤50μH, Single pulse Marking : K4179 Any and all SANYO Semiconductor Co.