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Sanyo Electric Components Datasheet

ATP216 Datasheet

N-Channel Silicon MOSFET

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Ordering number : EN8985
ATP216
SANYO Semiconductors
DATA SHEET
ATP216
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
ON-resistance RDS(on)1=17mΩ(typ.)
1.8V drive
Slim package
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Note :*1 VDD=10V, L=100μH, IAV=18A
*2 L100μH, Single pulse
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
Conditions
PW10μs, duty cycle1%
Tc=25°C
Ratings
50
±10
35
105
40
150
--55 to +150
40
17.5
Unit
V
V
A
A
W
°C
°C
mJ
A
Package Dimensions
unit : mm (typ)
7057-001
6.5
4
1.5
0.4
4.6
2.6
0.4
Product & Package Information
• Package
: ATPAK
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Marking
ATP216
LOT No.
TL
2
1
0.8
3
0.6
2.3 2.3
0.55
0.4
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPAK
Electrical Connection
2,4
1
3
http://semicon.sanyo.com/en/network
51111PA TKIM TC-00002591 No.8985-1/4
Datasheet pdf - http://www.DataSheet4U.net/


Sanyo Electric Components Datasheet

ATP216 Datasheet

N-Channel Silicon MOSFET

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics at Ta=25°C
ATP216
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=50V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=18A
ID=18A, VGS=4.5V
ID=9A, VGS=2.5V
ID=5A, VGS=1.8V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=30V, VGS=4.5V, ID=35A
VDS=30V, VGS=4.5V, ID=35A
VDS=30V, VGS=4.5V, ID=35A
IS=35A, VGS=0V
Switching Time Test Circuit
VIN
4.5V
0V
VIN
PW=10μs
D.C.1%
G
VDD=30V
ID=18A
RL=1.67Ω
D VOUT
ATP216
P.G 50Ω S
min
50
Ratings
typ
0.4
58
17
20
30
2700
150
110
27
90
220
105
30
5.9
7.9
0.96
max
1
±10
1.4
23
28
45
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
35
Tc=25°C
30
25
ID -- VDS
3.0V 2.5V
3.5V
20
15 2.0V
10
1.8V
5 VGS=1.5V
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT16430
50
VDS=10V
45
ID -- VGS
40
35
30
25
20
15
10
5
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Gate-to-Source Voltage, VGS -- V IT16431
No.8985-2/4
Datasheet pdf - http://www.DataSheet4U.net/


Part Number ATP216
Description N-Channel Silicon MOSFET
Maker Sanyo Semicon Device
PDF Download

ATP216 Datasheet PDF






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