CPH3355 Datasheet | SANYO

Features - - - P-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)1=120mΩ(typ.) 4V drive Halogen free pliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --30 ±20 --2.5 --10 1 150 --55 to +150 Unit V V A A W °C °C Package Dimensions unit : mm (typ) 7015A-004 Product & Package Information - Package : CPH3 - JEITA, JEDEC : SC-59, TO-236, SOT-23 - Minimum Packing Quantity : 3,000 pcs./reel 2.9 0.6 3 Packing Type: TL Marking 1 0.95 2 0.4 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Electrical Connection 2 http://semicon.sanyo./en/network D2210PE TKIM TC-00002536 No. A1905-1/4 Datasheet pdf - http://..net/ LOT No. .Data Sheet.co.kr Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions -1m A, VGS=0V ID=-30V, VGS=0V VDS=VGS=±16V, VDS=0V -10V, ID=-1m A VDS=-10V, ID=-1A VDS=-1A, VGS=-10V ID=-0.5A, VGS=-4.5V ID=-0.5A, VGS=-4V ID=VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--2.5A VDS=--15V, VGS=--10V, ID=--2.5A...