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Sanyo Electric Components Datasheet

ECH8606 Datasheet

Ultrahigh-Speed Switching Applications

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Ordering number : ENN7406
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
ECH8606
N-Channel Silicon MOSFET
ECH8606
Ultrahigh-Speed Switching Applications
Package Dimensions
unit : mm
2206A
[ECH8606]
0.3
8
5
0.15
1
0.65
4
2.9
Top View
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Specifications
Absolute Maximum Ratings at Ta=25°C
SANYO : ECH8
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Electrical Characteristics at Ta=25°C
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (900mm2!0.8mm)1unit
Mounted on a ceramic board (900mm2!0.8mm)
Ratings
30
±20
6
40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Marking : KF
Symbol
Conditions
V(BR)DSS
IDSS
IGSS
VGS(off)
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±16V, VDS=0
VDS=10V, ID=1mA
min
30
1.0
Ratings
typ
max
Unit
V
1 µA
±10 µA
2.4 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
13003 TS IM TA-100299 No.7406-1/4


Sanyo Electric Components Datasheet

ECH8606 Datasheet

Ultrahigh-Speed Switching Applications

No Preview Available !

ECH8606
Continued from preceding page.
Parameter
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=10V, ID=3A
ID=2A, VGS=10V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
VDS=10V, VGS=10V, ID=6A
IS=6A, VGS=0
min
3.3
Ratings
typ
5
25
52
510
105
70
15
74
43
37
11
1.9
2.9
0.85
max
34
75
1.2
Unit
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10µs
D.C.1%
G
VDD=15V
ID=3A
RL=5
D VOUT
P.G 50ECH8606
S
Electrical Connection
D1 D1 D2
D2
S1 G1 S2 G2
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
(Top view)
ID -- VDS
6
5
4
3
2
VGS=3V
1
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Drain-to-Source Voltage, VDS -- V IT05583
RDS(on) -- VGS
120
Ta=25°C
100
80
ID=1A 2A
60
40
20
0
0 2 4 6 8 10 12
Gate-to-Source Voltage, VGS -- V IT05585
10
VDS=10V
9
ID -- VGS
8
7
6
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Gate-to-Source Voltage, VGS -- V IT05584
RDS(on) -- Ta
80
70
60 ID=1A, VGS=4V
50
40
30 ID=2A, VGS=10V
20
10
0
--50 --25
0
25 50 75 100 125 150
Ambient Temperature, Ta -- °C
IT05586
No.7406-2/4


Part Number ECH8606
Description Ultrahigh-Speed Switching Applications
Maker Sanyo Semicon Device
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ECH8606 Datasheet PDF






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