* High speed.
* High breakdown voltage (VCBO=1600V).
* High reliability (Adoption of HVP process).
* Adoption of MBIT process. Package Dimensions unit:mm 2048B-TO3PBL [TS7994] 6.0 20.0 ΓΈ3.3 5.0 26.0 2.0 3.4 20.7 2.0 1.0 0.6 1.2 5.45 5.45 Specifications Abs
TS7994
Sanyo Semicon Device
37.09 KB
Npn triple diffused planar silicon transistor.
Ordering number :EN5962 NPN Triple Diffused Planar Silicon Transistor TS7994 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicati.
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