2N5623
DESCRIPTION
- With TO-3 package
- Excellent safe operating area
- Low collector saturation voltage APPLICATIONS
- For audio and general-purpose applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL PARAMETER 2N5621 VCBO Collector-base voltage 2N5623/5625 2N5627 2N5621 VCEO Collector-emitter voltage 2N5623/5625 2N5627 VEBO IC PD Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature TC=25 Open collector Open base Open emitter CONDITIONS VALUE -80 -100 -120 -60 -80 -100 -5 -10 100 150 -65~200 V A W V V UNIT
THERMAL CHARACTERISTICS
SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER 2N5621 VCEO(SUS) Collector-emitter sustaining voltage 2N5623/5625 2N5627 VCEsat VBE...
