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SavantIC

2SD1060 Datasheet Preview

2SD1060 Datasheet

SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1060
DESCRIPTION
www.dat·aWshiethet4TuO.co-2m20 package
·Low collector saturation voltage
·Complement to type 2SB824
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
60
50
6
5
9
30
150
-55~150
UNIT
V
V
V
A
A
W




SavantIC

2SD1060 Datasheet Preview

2SD1060 Datasheet

SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1060
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=:
V(BR)CBO Collector-base breakdown voltage
IC=1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat
ICBO
IEBO
hFE-1
Collector-emitter saturation voltage IC=3A; IB=0.3A
Collector cut-off current
VCB=40V;IE=0
Emitter cut-off current
VEB=4V; IC=0
DC current gain
IC=1A ; VCE=2V
hFE-2
DC current gain
IC=3A ; VCE=2V
COB Output capacitance
fT Transition frequency
Switching times
IE=0 ; VCB=10V;f=1MHz
IC=1A ; VCE=-5V
ton Turn-on time
ts Storage time
tf Fall time
IC=2.0A; IB1= IB2=0.2A
MIN TYP. MAX UNIT
50 V
60 V
6V
0.4 V
0.1 mA
0.1 mA
70 280
30
100 pF
30 MHz
0.1 µs
1.4 µs
0.2 µs
hFE-1 classifications
QRS
70-140 100-200 140-280
2


Part Number 2SD1060
Description SILICON POWER TRANSISTOR
Maker SavantIC
Total Page 4 Pages
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