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SavantIC

BD900 Datasheet Preview

BD900 Datasheet

(BD900 / BD902) SILICON POWER TRANSISTOR

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SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896/898/900/902
DESCRIPTION
·With TO-220C package
www.dat·aCshoemet4pule.cmoment to type BD895/897/899/901
·DARLINGTON
APPLICATIONS
·For use in output stages in audio equipment,
general amplifier,and analogue switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
BD896
VCBO
Collector-base voltage
BD898
BD900
BD902
BD896
VCEO
Collector-emitter voltage
BD898
BD900
BD902
VEBO
Emitter-base voltage
IC Collector current-DC
IB Base current
PT Total power dissipation
Tj Junction temperature
Tstg Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
Ta=25
VALUE
-45
-60
-80
-100
-45
-60
-80
-100
-5
-8
-300
70
2
150
-65~150
UNIT
V
V
V
A
mA
W




SavantIC

BD900 Datasheet Preview

BD900 Datasheet

(BD900 / BD902) SILICON POWER TRANSISTOR

No Preview Available !

SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
BD896/898/900/902
CHARACTERISTICS
Tj=25 unless otherwise specified
www.datasheet4u.com
SYMBOL
PARAMETER
CONDITIONS
BD896
V(BR)CEO
Collector-emitter
breakdown voltage
BD898
BD900
IC=-100mA, IB=0
BD902
VCEsat
VBE
ICBO
ICEO
IEBO
hFE
VEC
ton
toff
Collector-emitter saturation voltage IC=-3A ,IB=-12mA
Base-emitter on voltage
BD896
Collector cut-off current
BD898
BD900
BD902
BD896
IC=-3A ; VCE=-3V
VCB=-45V, IE=0
TC=100
VCB=-60V, IE=0
TC=100
VCB=-80V, IE=0
TC=100
VCB=-100V, IE=0
TC=100
VCE=-30V, IB=0
Collector cut-off current
BD898
BD900
VCE=-30V, IB=0
VCE=-40V, IB=0
BD902 VCE=-50V, IB=0
Emitter cut-off current
VEB=-5V; IC=0
DC current gain
IC=-3A ; VCE=-3V
Diode forward voltage
IE=-8A
Turn-on time
Turn-off time
IC=-3A ; IB1=-IB2=-12mA
VBE=3.5V;RL=10B;tp=20µs
MIN
-45
-60
-80
-100
TYP.
MAX UNIT
V
-2.5 V
-2.5 V
-0.2
-2.0
-0.2
-2.0 mA
-0.2
-2.0
-0.2
-2.0
-0.5 mA
-2 mA
750
-3.5 V
1 µs
5 µs
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
MAX
1.79
UNIT
/W
2


Part Number BD900
Description (BD900 / BD902) SILICON POWER TRANSISTOR
Maker SavantIC
PDF Download

BD900 Datasheet PDF






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