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SDT2P02 - Dual P-Channel MOSFET

General Description

These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation.

Key Features

  • Low RDS(on) trench technology Low thermal impedance Fast switching speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SDT2P02 -2.2A, -20V, RDS(ON) 200 mΩ Dual-P Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to assure minimal power loss and heat dissipation. DFN2x2-6L-J FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed APPLICATIONS Battery-powered instruments Portable computing Mobile phones GPS units and media players PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ. Max. 2.00 BSC. 2.00 BSC. 0.675 0.75 0.80 0.30 Typ. 0.75 0.86 1.1 0.65BSC REF. G H J K L P Millimeter Min. Typ. Max. 0.30 BSC 0.20 BSC 0 -- 0.