SMG2345PE Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente -3.2A , -40V , RDS(ON) 164 mΩ P-Channel Enhancement MOSFET RoHS pliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Features Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as puters, printers, PCMCIA cards, cellular and cordless...