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SSD04N60J - N-Channel MOSFET

General Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain-to-source diode with a fast recovery time.

Key Features

  • High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified.

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Datasheet Details

Part number SSD04N60J
Manufacturer SeCoS
File Size 156.06 KB
Description N-Channel MOSFET
Datasheet download datasheet SSD04N60J Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Elektronische Bauelemente SSD04N60J 4A , 600V , RDS(ON) 3Ω N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits. FEATURES High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PACKAGE INFORMATION Package MPQ TO-252 2.