SSD04N60J Datasheet | SeCoS Halbleitertechnologie GmbH

Elektronische Bauelemente 4A , 600V , RDS(ON) 3Ω N-Ch Enhancement Mode Power MOSFET RoHS pliant Product A suffix of “-C” specifies halogen free DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications such as power suppliers, converters, power motor control, and bridge circuits. Features High Current Rating Lower RDS(ON) Lower Capacitance Lower Total Gate Charge Tighter VSD Specifications Avalanche Energy Specified PACKAGE INFORMATION Package TO-25...