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SSD04N60J Datasheet Preview

SSD04N60J Datasheet

N-Channel Enhancement Mode Power MOSFET

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Elektronische Bauelemente
SSD04N60J
4A , 600V , RDS(ON) 3
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
This advanced high voltage MOSFET is designed to withstand high
energy in the avalanche mode and switch efficiently. This new high
energy device also offers a drain-to-source diode with a fast recovery
time. Designed for high voltage, high speed switching applications
such as power suppliers, converters, power motor control, and
bridge circuits.
FEATURES
High Current Rating
Lower RDS(ON)
Lower Capacitance
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
PACKAGE INFORMATION
Package
MPQ
TO-252
2.5K
Leader Size
13 inch
ORDER INFORMATION
Part Number
Type
SSD04N60J
Lead (Pb)-free
SSD04N60J-C
Lead (Pb)-free and Halogen-free
TO-252
A
BC
D
GE
K HF
MJ
N
O
P
REF.
Millimeter
Min. Max.
REF.
Millimeter
Min. Max.
A 6.35 6.90 J 2.186 2.386
B 4.95 5.50 K 0.64 1.14
C 2.10 2.50 M 0.50 1.14
D 0.43 0.9 N 1.3 1.8
E 6.0 7.5 O 0 0.13
F 2.90 REF P 0.58REF.
G 5.40 6.40
H 0.60 1.20
1
Gate
2
Drain
3
Source
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Continuous Drain-Source Diode Forward Current
Maximum Lead Temperature for Soldering Purposes@1/8’’ from case
for 5 seconds
IS
TL
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance from Junction to Ambient
RθJA
Rating
600
±30
4
4
260
-55~150
100
Unit
V
V
A
A
°C
°C
°C/ W
http://www.SeCoSGmbH.com/
19-Oct-2017 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 3




SeCoS

SSD04N60J Datasheet Preview

SSD04N60J Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

Elektronische Bauelemente
SSD04N60J
4A , 600V , RDS(ON) 3
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Parameter
Symbol Min. Typ.
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Diode Forward Voltage 1
BVDSS
VSD
600
-
-
-
Drain-Source Leakage Current
Gate-Source Leakage Forward Current 1
Gate-Source Leakage Reverse Current 1
IDSS
-
-
IGSSF
-
-
IGSSR
-
-
On Characteristics 1
Gate Threshold Voltage
VGS(th)
2
-
Static Drain-Source On-Resistance
RDS(ON)
-
2
Forward Transconductance
gfs - 2.6
Dynamic Characteristics
Input Capacitance
Ciss - 540
Output Capacitance
Coss
- 125
Reverse Transfer Capacitance
Crss
-
8
Switching Characteristics
Total Gate Charge
Qg - 5
Gate-Source Charge
Qgs - 2.7
Gate-Drain (“Miller”) Change
Qgd - 2
Turn-on Delay Time
Td(on)
-
12
Rise Time
Tr - 7
Turn-off Delay Time
Td(off)
-
19
Fall Time
Tf
Note:
1. Pulse Test : Pulse width300µs, duty cycle2%.
- 10
Max. Unit Test condition
-
1.5
25
100
-100
V VGS=0, ID=250µA
V VGS=0, IS=4A
µA VDS=600V, VGS=0
nA VDS=0V, VGS=30V
nA VDS=0V, VGS= -30V
4 V VDS=VGS, ID=250µA
3 VGS=10V, ID=2A
- S VDS=50V, ID=2A
- VDS=25V
- pF VGS=0
- f=1MHz
- VDS=480V
- nC VGS=10V
- ID=4A
-
VDD=300V
- nS VGS=10V
- RG=9.1
ID=4A
-
http://www.SeCoSGmbH.com/
19-Oct-2017 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3


Part Number SSD04N60J
Description N-Channel Enhancement Mode Power MOSFET
Maker SeCoS
Total Page 3 Pages
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